Electrical Analysis of Si3N4 Cap Layer and STI Stress on 0.13nm CMOS Device

RADZALI, ROSFARIZA BINTI (2008) Electrical Analysis of Si3N4 Cap Layer and STI Stress on 0.13nm CMOS Device. In: UNSPECIFIED.

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Item Type:	Conference or Workshop Item (UNSPECIFIED)
PRISMA ID:	11175
URI:	http://oarr.uitm.edu.my/id/eprint/20840

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