Design and analysis of 22 nm DG-MOSFET with high-k metal gate graphene structure for better current performance

One of the innovations with the unique properties of graphene, which is frequently a complementary material of today's advanced materials technology, is the design process for the virtual fabrication of double layer graphene MOSFET 22 nm with high-k metal gate (HKMG). Aggressive scaling of MOSF...

詳細記述

書誌詳細
第一著者: Yahaya, Izwanizam
フォーマット: 学位論文
言語:英語
英語
出版事項: 2024
オンライン･アクセス:http://eprints.utem.edu.my/id/eprint/28370/1/Design%20and%20analysis%20of%2022%20nm%20DG-MOSFET%20with%20high-k%20metal%20gate%20graphene%20structure%20for%20better%20current%20performance.pdf
http://eprints.utem.edu.my/id/eprint/28370/2/Design%20and%20analysis%20of%2022%20nm%20DG-MOSFET%20with%20high-k%20metal%20gate%20graphene%20structure%20for%20better%20current%20performance.pdf

インターネット

http://eprints.utem.edu.my/id/eprint/28370/1/Design%20and%20analysis%20of%2022%20nm%20DG-MOSFET%20with%20high-k%20metal%20gate%20graphene%20structure%20for%20better%20current%20performance.pdf
http://eprints.utem.edu.my/id/eprint/28370/2/Design%20and%20analysis%20of%2022%20nm%20DG-MOSFET%20with%20high-k%20metal%20gate%20graphene%20structure%20for%20better%20current%20performance.pdf

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