Optimization of dc and rf performances using multiple-gated high electron mobility transistor (HEMT) / Mohd Nizam Osman
This study carried out a detail analysis of the perform anc e of HEMT device with various numb ers of gate finger s with respect to their DC and RF performances. The dev ices were fabrica ted by a Plessey found ry which adapted a HEMT process with 0.2 um GaAs technology. A few stages were tak en...
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| フォーマット: | 学位論文 |
| 言語: | 英語 |
| 出版事項: |
2009
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| 主題: | |
| オンライン･アクセス: | https://ir.uitm.edu.my/id/eprint/27375/1/TM_MOHD%20NIZAM%20OSMAN%20EE%2009_5.pdf |