Electrochemical Deposition and Characterization of Copper Indium Disulfide Semiconductor Thin Films

Copper indium disulfide (CuInS2) has attracted much interest as absorber layer in photovoltaic cellapplications because of its direct band gap energy of ~1.5 eV, high conversion efficiency, high absorption coefficient and free from hazardous chalcogenides, selenium or tellurium. In this work, three...

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Détails bibliographiques
Auteur principal: Teo, Sook Liang
Format: Thèse
Langue:anglais
anglais
Publié: 2011
Sujets:
Accès en ligne:http://psasir.upm.edu.my/id/eprint/19881/1/FS_2011_40_ir.pdf

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