Optical, Thermal and Carrier Transport Properties of Porous Silicon Layer Determined Using Photoacoustic Spectroscopy
In this study, porous silicon layers were fabricated on p-type and n-type silicon substrates by electrochemical etching method at five different current densities (i.e. 16.98, 22.64, 28.29, 33.96 and 39.62) mA/cm2. The etching duration was fixed at 20 minutes. In the second series of preparation, th...
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة |
| اللغة: | الإنجليزية الإنجليزية |
| منشور في: |
2006
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://psasir.upm.edu.my/id/eprint/557/1/600402_fs_2006_42_abstrak_je__dh_pdf_.pdf |