APA引文

Ahmed, R. A. (2013). Fault tolerance of L1 data cache memory induced by intrinsic parameters fluctuation in sub 10nm UTB-SOI MOSFETs.

芝加哥风格引文

Ahmed, Rabah Abood. Fault Tolerance of L1 Data Cache Memory Induced by Intrinsic Parameters Fluctuation in Sub 10nm UTB-SOI MOSFETs. 2013.

MLA引文

Ahmed, Rabah Abood. Fault Tolerance of L1 Data Cache Memory Induced by Intrinsic Parameters Fluctuation in Sub 10nm UTB-SOI MOSFETs. 2013.

警告:这些引文格式不一定是100%准确.