Neodymium oxide thin film gate oxide on silicon substrate / Hetherin Karuppiah

Metallic neodymium (Nd) films were sputtered on silicon substrates. The films then underwent thermal oxidation andthermal oxynitridation at various durations of 5 min, 10 min, 15 min, and 20 min. The optimized time was utilized to carry out thermal oxidation and thermal oxynitridation at various tem...

Full description

Bibliographic Details
Main Author: Hetherin , Karuppiah
Format: Thesis
Published: 2018
Subjects: