Neodymium oxide thin film gate oxide on silicon substrate / Hetherin Karuppiah
Metallic neodymium (Nd) films were sputtered on silicon substrates. The films then underwent thermal oxidation andthermal oxynitridation at various durations of 5 min, 10 min, 15 min, and 20 min. The optimized time was utilized to carry out thermal oxidation and thermal oxynitridation at various tem...
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة |
| منشور في: |
2018
|
| الموضوعات: |