Neodymium oxide thin film gate oxide on silicon substrate / Hetherin Karuppiah
Metallic neodymium (Nd) films were sputtered on silicon substrates. The films then underwent thermal oxidation andthermal oxynitridation at various durations of 5 min, 10 min, 15 min, and 20 min. The optimized time was utilized to carry out thermal oxidation and thermal oxynitridation at various tem...
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| Format: | Thèse |
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2018
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