Epitaxial growth of semi-polar (11-22) gallium nitride FOR UV photosensing application / Abdullah Haaziq Ahmad Makinudin
Semi-polar (11-22) gallium nitride (GaN) epilayers have attracted numerous interests in GaN based technology as it possess significant advantages over its polar (c-plane) counterparts such as low to none spontaneous and piezoelectric polarization which is known to impair the device performance. Howe...
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| Format: | Thesis |
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2020
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