Epitaxial growth of semi-polar (11-22) gallium nitride FOR UV photosensing application / Abdullah Haaziq Ahmad Makinudin
Semi-polar (11-22) gallium nitride (GaN) epilayers have attracted numerous interests in GaN based technology as it possess significant advantages over its polar (c-plane) counterparts such as low to none spontaneous and piezoelectric polarization which is known to impair the device performance. Howe...
| 主要作者: | |
|---|---|
| 格式: | Thesis |
| 出版: |
2020
|
| 主題: |