Effect of gas flow rate and deposition pressure toward the crystallographic and surface morphology of semi-polar (112̅2) gallium nitride grown by MOCVD / Ooi Chong Seng
V/III ratio and pressure is frequently varied to study the metalorganic chemical vapor deposition (MOCVD) growth parameters effect on semi-polar (112̅2) gallium nitride epitaxy (GaN) growth on m-plane (101̅0) sapphire substrate. In the first study, V/III ratio is fixed at 118 while varying the Trime...
| मुख्य लेखक: | |
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| स्वरूप: | थीसिस |
| प्रकाशित: |
2022
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| विषय: |