Formation and characterization of rare earth oxides as high-K gate dielectrics on germanium substrate / Tahsin Ahmed Mozaffor Onik

In this study, Sm2O3/Ge and Ho2O3/Ge stack based metal oxide semiconductor (MOS) capacitors were prepared from radio frequency (RF) sputtered metallic Sm on Ge sub-strate and metallic Ho on Ge substrate followed by thermal oxidation/nitridation in N2O ambient. The effects of several oxidation/nitrid...

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Détails bibliographiques
Auteur principal:	Tahsin Ahmed , Mozaffor Onik
Format:	Thèse
Publié:	2022
Sujets:	TJ Mechanical engineering and machinery

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