Samarium oxide and samarium oxynitride thin film gate oxides on silicon substrate / Goh Kian Heng

Sputtered pure samarium (Sm) metal films on silicon substrates were thermally oxidized and oxynitrided at various temperatures (600 – 900 °C) and durations (5 – 20 min). Effects of thermal oxidation ambient in oxygen (O2) and nitrous oxide (N2O) gas ambient on the physical and electrical properti...

書誌詳細
第一著者:	Goh, Kian Heng
フォーマット:	学位論文
出版事項:	2017
主題:	Q Science (General) T Technology (General)

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