Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai
The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for blue light emission via metal-organic chemical vapor deposition (MOCVD). The homoepitaxy growth of GaN-on-GaN gives an unprecedented high performance with low defect density, high-quality crystal, simplified LED arch...
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| स्वरूप: | थीसिस |
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2018
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