Kesan sepuhlindap ke atas ciri elektrik sentuhan Ohmik dan Schottky untuk peranti transistor elektron berkelincahan tinggi (HEMTs)

عرض إصدارات أخرى (1)

Dalam penyelidikan ini, sentuhan Ohmik dan Schottky telah difabrikasi pada lapisan GaAs/AlGaAs/InGaAs Transistor Elektron Berkelincahan Tinggi (HEMTs). Antara muka logam-semikonduktor yang baik adalah penting untuk rintangan sentuhan spesifik yang terendah dan sifat-sifat penerus yang baik. Wafer ep...

وصف كامل

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Asban Dolah (P38625)
مؤلفون آخرون:	Mohamad Deraman, Profesor Dr.
التنسيق:	theses
اللغة:	الماليزية
منشور في:	UKM, Bangi 2023
الموضوعات:	Metal semiconductor field-effect transistors
الوصول للمادة أونلاين:	https://ptsldigital.ukm.my/jspui/handle/123456789/463519
Abstract	Abstract here

مواد مشابهة

Kesan sepuhlindap ke atas ciri elektrik sentuhan Ohmik dan Schottky untuk peranti transistor elektron berkelincahan tinggi (HEMTs)
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منشور في: (2023)

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