Design And Performance Of Laser Structures Based On Group III-Nitrides [QC689.55.S45 T363 2008 f rb].

Simulasi peranti bagi ciri elektrik, optik dan terma diod-diod laser (LDs) berasaskan GaN telah dikaji. Bagi laser-laser sedemikian adalah susah memperolehi lapisan penutup-p yang mempunyai ketebalan yang mencukupi, Device simulations for the electrical, optical and thermal characteristics of GaN...

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Bibliographic Details
Main Author:	Thahab, Sabah Mresn
Format:	Thesis
Language:	English
Published:	2008
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/10397/
Abstract	Abstract here

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