Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997].

Lapisan nipis ZrO2 untuk aplikasi get dielektrik telah dibentuk di atas substrat Si dan SiC dengan menggunakan kombinasi proses pemercitan logam dan pengoksidaan haba. ZrO2 thin films for gate dielectric application has been formed on Si and SiC substrates using a combination of metal sputtering...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखक:	Tedi, Kurniawan
स्वरूप:	थीसिस
भाषा:	अंग्रेज़ी
प्रकाशित:	2009
विषय:	TN1-997 Mining engineering. Metallurgy
ऑनलाइन पहुंच:	http://eprints.usm.my/15537/
Abstract	Abstract here

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