Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997].

Lapisan nipis ZrO2 untuk aplikasi get dielektrik telah dibentuk di atas substrat Si dan SiC dengan menggunakan kombinasi proses pemercitan logam dan pengoksidaan haba. ZrO2 thin films for gate dielectric application has been formed on Si and SiC substrates using a combination of metal sputtering...

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Bibliographic Details
Main Author:	Tedi, Kurniawan
Format:	Thesis
Language:	English
Published:	2009
Subjects:	TN1-997 Mining engineering. Metallurgy
Online Access:	http://eprints.usm.my/15537/
Abstract	Abstract here

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