PA-MBE GaN-Based Optoelectronics on Silicon Substrates

Dalam penyelidikan ini, epitaksi alur molekul berbantukan plasma nitrogen frekuensi radio (RF) digunakan untuk menumbuhkan bahan galium nitrid (GaN) di atas substrat Si(111) dengan penggunaan aluminium nitrid (AlN) yang ditumbuhkan pada suhu tinggi sebagai lapisan penimbal. In this project, radio...

وصف كامل

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Chuah , Lee Siang
التنسيق:	أطروحة
اللغة:	الإنجليزية
منشور في:	2009
الموضوعات:	QC1 Physics (General)
الوصول للمادة أونلاين:	http://eprints.usm.my/15595/
Abstract	Abstract here

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