Investigation Of Metal-Organic Decomposed (MOD) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique

Metal-organic decomposed (MOD) Ce(h precursor has been spin coated on n-type Si and n-type GaN substrates with thickness in the range of 45-90 nm. Prapenanda Ce02 yang disediakan dengan teknik penguraian organik logam telah diserakkan ke atas wafer Si dan GaN beljenis n dengan ketebalan dalam Iin...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखक: Quah, Hock Jin
स्वरूप: थीसिस
भाषा:अंग्रेज़ी
प्रकाशित: 2010
विषय:
TN1-997 Mining engineering. Metallurgy
ऑनलाइन पहुंच:http://eprints.usm.my/28916/
विवरण
सारांश:Metal-organic decomposed (MOD) Ce(h precursor has been spin coated on n-type Si and n-type GaN substrates with thickness in the range of 45-90 nm. Prapenanda Ce02 yang disediakan dengan teknik penguraian organik logam telah diserakkan ke atas wafer Si dan GaN beljenis n dengan ketebalan dalam Iinkungan 45-90 run.

समान संसाधन