Investigation Of Metal-Organic Decomposed (MOD) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique

Metal-organic decomposed (MOD) Ce(h precursor has been spin coated on n-type Si and n-type GaN substrates with thickness in the range of 45-90 nm. Prapenanda Ce02 yang disediakan dengan teknik penguraian organik logam telah diserakkan ke atas wafer Si dan GaN beljenis n dengan ketebalan dalam Iin...

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Détails bibliographiques
Auteur principal:	Quah, Hock Jin
Format:	Thèse
Langue:	anglais
Publié:	2010
Sujets:	TN1-997 Mining engineering. Metallurgy
Accès en ligne:	http://eprints.usm.my/28916/
Abstract	Abstract here

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