Investigation Of Metal-Organic Decomposed (MOD) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique
Metal-organic decomposed (MOD) Ce(h precursor has been spin coated on n-type Si and n-type GaN substrates with thickness in the range of 45-90 nm. Prapenanda Ce02 yang disediakan dengan teknik penguraian organik logam telah diserakkan ke atas wafer Si dan GaN beljenis n dengan ketebalan dalam Iin...
| मुख्य लेखक: | Quah, Hock Jin |
|---|---|
| स्वरूप: | थीसिस |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2010
|
| विषय: | |
| ऑनलाइन पहुंच: | http://eprints.usm.my/28916/ |
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समान संसाधन
-
Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate
द्वारा: Samsudin, Muhammad Esmed Alif
प्रकाशित: (2016) -
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द्वारा: Mohd. Ghazali, Norizzawati
प्रकाशित: (2015) -
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द्वारा: Chuah, Soo Kiet
प्रकाशित: (2011) -
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द्वारा: Fong, Chee Yong
प्रकाशित: (2016) -
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द्वारा: Jasni, Farah Anis
प्रकाशित: (2009)