Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics

n-channel metal oxide semiconductor field effect transistor (n-MOSFET) fabrication requires specialized and expensive technologies such as ion implantation, chemical vapor deposition (CVD) and hazardous gases such as silane (SiH4), HCl and hydrogen. Low cost emulsion photomask with 35 μm channel...

書誌詳細
第一著者:	Mohd Rashid, Mohd Marzaini
フォーマット:	学位論文
言語:	英語
出版事項:	2012
主題:	QC1 Physics (General)
オンライン･アクセス:	http://eprints.usm.my/29062/

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