Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process
Kajian mengenai fabrikasi filem nipis GaN berliang melalui proses fotoelektrokimia (PEC) telah dilaporkan. An investigation into the fabrication of porous GaN thin films via photoelectrochemical (PEC) process was reported. The main objective for this research work is to investigate the morpho...
| मुख्य लेखक: | |
|---|---|
| स्वरूप: | थीसिस |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2015
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| विषय: | |
| ऑनलाइन पहुंच: | http://eprints.usm.my/30084/ |
| सारांश: | Kajian mengenai fabrikasi filem nipis GaN berliang melalui proses fotoelektrokimia
(PEC) telah dilaporkan.
An investigation into the fabrication of porous GaN thin films via
photoelectrochemical (PEC) process was reported. The main objective for this
research work is to investigate the morphological and optical properties of fabricated
porous GaN thin films. |
|---|