Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process
Kajian mengenai fabrikasi filem nipis GaN berliang melalui proses fotoelektrokimia (PEC) telah dilaporkan. An investigation into the fabrication of porous GaN thin films via photoelectrochemical (PEC) process was reported. The main objective for this research work is to investigate the morpho...
| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.usm.my/30084/ |
| _version_ | 1846215509848096768 |
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| author | Cheah , Sook Fong |
| author_facet | Cheah , Sook Fong |
| author_sort | Cheah , Sook Fong |
| description | Kajian mengenai fabrikasi filem nipis GaN berliang melalui proses fotoelektrokimia
(PEC) telah dilaporkan.
An investigation into the fabrication of porous GaN thin films via
photoelectrochemical (PEC) process was reported. The main objective for this
research work is to investigate the morphological and optical properties of fabricated
porous GaN thin films. |
| first_indexed | 2025-10-17T08:05:14Z |
| format | Thesis |
| id | usm-30084 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2025-10-17T08:05:14Z |
| publishDate | 2015 |
| record_format | eprints |
| spelling | usm-300842019-04-12T05:25:49Z http://eprints.usm.my/30084/ Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process Cheah , Sook Fong QC1 Physics (General) Kajian mengenai fabrikasi filem nipis GaN berliang melalui proses fotoelektrokimia (PEC) telah dilaporkan. An investigation into the fabrication of porous GaN thin films via photoelectrochemical (PEC) process was reported. The main objective for this research work is to investigate the morphological and optical properties of fabricated porous GaN thin films. 2015-01 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/30084/1/Cheah_Sook_Fong.pdf Cheah , Sook Fong (2015) Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process. Masters thesis, Universiti Sains Malaysia. |
| spellingShingle | QC1 Physics (General) Cheah , Sook Fong Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process |
| title | Morphological And Optical
Properties Of Porous Gallium Nitride
(Gan) Fabricated By
Photoelectrochemical Process |
| title_full | Morphological And Optical
Properties Of Porous Gallium Nitride
(Gan) Fabricated By
Photoelectrochemical Process |
| title_fullStr | Morphological And Optical
Properties Of Porous Gallium Nitride
(Gan) Fabricated By
Photoelectrochemical Process |
| title_full_unstemmed | Morphological And Optical
Properties Of Porous Gallium Nitride
(Gan) Fabricated By
Photoelectrochemical Process |
| title_short | Morphological And Optical
Properties Of Porous Gallium Nitride
(Gan) Fabricated By
Photoelectrochemical Process |
| title_sort | morphological and optical properties of porous gallium nitride gan fabricated by photoelectrochemical process |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/30084/ |
| work_keys_str_mv | AT cheahsookfong morphologicalandopticalpropertiesofporousgalliumnitrideganfabricatedbyphotoelectrochemicalprocess |