Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates

Secara umumnya tesis ini membentangkan kajian lapisan GaN yang ditumbuh di atas substrat Si (100). Pada bahagian pertama tesis ini, sifat-sifat lapisan GaN di atas substrat kubik Si telah dibincangkan. Penambahbaikan ke atas sifat-sifat lapisan GaN telah dikesan melalui kaedah penyepuhlindapan....

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Main Author: Mohmad Zaini, Siti Nurul Waheeda
Format: Thesis
Language:English
Published: 2015
Subjects:
Online Access:http://eprints.usm.my/31387/
Abstract Abstract here
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author Mohmad Zaini, Siti Nurul Waheeda
author_facet Mohmad Zaini, Siti Nurul Waheeda
author_sort Mohmad Zaini, Siti Nurul Waheeda
description Secara umumnya tesis ini membentangkan kajian lapisan GaN yang ditumbuh di atas substrat Si (100). Pada bahagian pertama tesis ini, sifat-sifat lapisan GaN di atas substrat kubik Si telah dibincangkan. Penambahbaikan ke atas sifat-sifat lapisan GaN telah dikesan melalui kaedah penyepuhlindapan. In general, this thesis presents the study of GaN layer grown on different cubic substrates. In the first part of this work, the properties of GaN film grown on (100)- oriented cubic Si substrate was investigated. Improvement in the properties of the GaN layer are observed by means of thermal annealing treatment.
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spelling usm-313872019-04-12T05:25:40Z http://eprints.usm.my/31387/ Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates Mohmad Zaini, Siti Nurul Waheeda QC1 Physics (General) Secara umumnya tesis ini membentangkan kajian lapisan GaN yang ditumbuh di atas substrat Si (100). Pada bahagian pertama tesis ini, sifat-sifat lapisan GaN di atas substrat kubik Si telah dibincangkan. Penambahbaikan ke atas sifat-sifat lapisan GaN telah dikesan melalui kaedah penyepuhlindapan. In general, this thesis presents the study of GaN layer grown on different cubic substrates. In the first part of this work, the properties of GaN film grown on (100)- oriented cubic Si substrate was investigated. Improvement in the properties of the GaN layer are observed by means of thermal annealing treatment. 2015-09 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/31387/1/FABRICATION_AND_CHARACTERIZATION_OF_GaN_GROWN_ON_CUBIC_Si_%28100%29_AND_GaAs_%28001%29_SUBSTRATES.pdf Mohmad Zaini, Siti Nurul Waheeda (2015) Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates. Masters thesis, Universiti Sains Malaysia.
spellingShingle QC1 Physics (General)
Mohmad Zaini, Siti Nurul Waheeda
Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
thesis_level Master
title Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title_full Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title_fullStr Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title_full_unstemmed Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title_short Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title_sort fabrication and characterization of gan grown on cubic si 100 and gaas 001 substrates
topic QC1 Physics (General)
url http://eprints.usm.my/31387/
work_keys_str_mv AT mohmadzainisitinurulwaheeda fabricationandcharacterizationofgangrownoncubicsi100andgaas001substrates