Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate

Kajian ini memfokuskan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat silikon (Si) berliang melalui kaedah percikan frekuensi radio (RF sputtering) dan penyejat alur elektron (e-beam evaporator). Untuk perbandingan, lapisan penampan nitrida aluminium nitrida (AlN), lapisan penampan titani...

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Détails bibliographiques
Auteur principal:	Samsudin, Muhammad Esmed Alif
Format:	Thèse
Langue:	anglais
Publié:	2016
Sujets:	QC1 Physics (General)
Accès en ligne:	http://eprints.usm.my/31756/
Abstract	Abstract here

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