Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate

Kajian ini memfokuskan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat silikon (Si) berliang melalui kaedah percikan frekuensi radio (RF sputtering) dan penyejat alur elektron (e-beam evaporator). Untuk perbandingan, lapisan penampan nitrida aluminium nitrida (AlN), lapisan penampan titani...

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Bibliographic Details
Main Author:	Samsudin, Muhammad Esmed Alif
Format:	Thesis
Language:	English
Published:	2016
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/31756/
Abstract	Abstract here

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