Rf-Mbe Growth Of Iii-Nitrides Heterostructures For Light Detecting Applications

Dalam penyelidikan ini, GaN p-n struktur homo, AlN/GaN struktur hetero, dan AlxGa1-xN/GaN struktur hetero telah berjaya ditumbuhkan di atas substrat silikon (Si) (111) menerusi epitaksi alur molekul plasma terbantu (MBE) untuk aplikasi pengesan foto. Galium (7N) dan aluminium (6N5) dengan ketulen...

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Bibliographic Details
Main Author:	Mohd Yusoff, Mohd Zaki
Format:	Thesis
Language:	English
Published:	2016
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/31760/
Abstract	Abstract here

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