Rf-Mbe Growth Of Iii-Nitrides Heterostructures For Light Detecting Applications

Dalam penyelidikan ini, GaN p-n struktur homo, AlN/GaN struktur hetero, dan AlxGa1-xN/GaN struktur hetero telah berjaya ditumbuhkan di atas substrat silikon (Si) (111) menerusi epitaksi alur molekul plasma terbantu (MBE) untuk aplikasi pengesan foto. Galium (7N) dan aluminium (6N5) dengan ketulen...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखक:	Mohd Yusoff, Mohd Zaki
स्वरूप:	थीसिस
भाषा:	अंग्रेज़ी
प्रकाशित:	2016
विषय:	QC1 Physics (General)
ऑनलाइन पहुंच:	http://eprints.usm.my/31760/
Abstract	Abstract here

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