Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques

Kajian ini menunjukkan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat gallium arsenida (GaAs) berliang melalui kaedah percikan frekuensi radio dan penyejat alur elektron. Sebagai perbandingan, penumbuhan secara terus ke atas substrat GaAs dan lapisan penampan nitrida seperti aluminum nitr...

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Bibliographic Details
Main Author:	Md Taib, Muhamad Ikram
Format:	Thesis
Language:	English
Published:	2016
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/31850/
Abstract	Abstract here

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