Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates

Galium nitrida (GaN) dengan jurang jalur langsung 3.4 eV telah menjadi tumpuan penyelidikan bahan. Ini adalah disebabkan oleh ciri-ciri dan kepentingan teknologinya untuk digunakan dalam pelbagai aplikasi seperti peranti optoelektronik dan peranti elektronik berkuasa tinggi. Pelbagai kaedah tradisio...

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Bibliographic Details
Main Author:	Fong, Chee Yong
Format:	Thesis
Language:	English
Published:	2016
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/31959/
Abstract	Abstract here

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