Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
Galium nitrida (GaN) dengan jurang jalur langsung 3.4 eV telah menjadi tumpuan penyelidikan bahan. Ini adalah disebabkan oleh ciri-ciri dan kepentingan teknologinya untuk digunakan dalam pelbagai aplikasi seperti peranti optoelektronik dan peranti elektronik berkuasa tinggi. Pelbagai kaedah tradisio...
| मुख्य लेखक: | Fong, Chee Yong |
|---|---|
| स्वरूप: | थीसिस |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2016
|
| विषय: | |
| ऑनलाइन पहुंच: | http://eprints.usm.my/31959/ |
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समान संसाधन
-
Spin Coating Growth And Characterization Of Indium Nitride Thin Films
द्वारा: Lee, Zhi Yin
प्रकाशित: (2018) -
Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate
द्वारा: Samsudin, Muhammad Esmed Alif
प्रकाशित: (2016) -
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द्वारा: Cheah , Sook Fong
प्रकाशित: (2015) -
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द्वारा: Ganie, Umar Bashir
प्रकाशित: (2018) -
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प्रकाशित: (2012)