Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography
Silicon nanowire transistor (SiNWT) has been successfully fabricated by atomic force microscopy (AFM) lithography through wet etching process. The silicon on insulator (SOI) <100> wafer was used as a starting material. Prior to use, the SOI wafer was cleaned by using ammonium hydroxide (NH4OH)...
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| Format: | Thèse |
| Langue: | anglais |
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2012
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| Accès en ligne: | http://eprints.usm.my/41348/ |
| Abstract | Abstract here |
| _version_ | 1855632012541427712 |
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| author | Abdullah, Ahmad Makarimi |
| author_facet | Abdullah, Ahmad Makarimi |
| author_sort | Abdullah, Ahmad Makarimi |
| description | Silicon nanowire transistor (SiNWT) has been successfully fabricated by atomic force microscopy (AFM) lithography through wet etching process. The silicon on insulator (SOI) <100> wafer was used as a starting material. Prior to use, the SOI wafer was cleaned by using ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), nitric acid (HNO3) and Di-Ionize water (DIW) and diluted hydrofluoric acid (HF) to remove the organic, inorganic contaminants and native oxide from the wafer surface. A non-contact AFM mode was chosen to perform the AFM lithography process on pre-cleaned SOI wafer. The SiNWT structure was designed by using raster programming. A conductive AFM tip (Cr/Pt cantilever tip) was used to fabricate SiNWT patterns on the SOI surface based on pre-designed structures. |
| first_indexed | 2025-10-17T08:16:32Z |
| format | Thesis |
| id | usm-41348 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2025-10-17T08:16:32Z |
| publishDate | 2012 |
| record_format | EPrints |
| record_pdf | Restricted |
| spelling | usm-413482018-08-16T07:04:20Z http://eprints.usm.my/41348/ Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography Abdullah, Ahmad Makarimi TN1-997 Mining engineering. Metallurgy Silicon nanowire transistor (SiNWT) has been successfully fabricated by atomic force microscopy (AFM) lithography through wet etching process. The silicon on insulator (SOI) <100> wafer was used as a starting material. Prior to use, the SOI wafer was cleaned by using ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), nitric acid (HNO3) and Di-Ionize water (DIW) and diluted hydrofluoric acid (HF) to remove the organic, inorganic contaminants and native oxide from the wafer surface. A non-contact AFM mode was chosen to perform the AFM lithography process on pre-cleaned SOI wafer. The SiNWT structure was designed by using raster programming. A conductive AFM tip (Cr/Pt cantilever tip) was used to fabricate SiNWT patterns on the SOI surface based on pre-designed structures. 2012-04 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/41348/1/AHMAD_MAKARIMI_ABDULLAH.pdf Abdullah, Ahmad Makarimi (2012) Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography. Masters thesis, Universiti Sains Malaysia. |
| spellingShingle | TN1-997 Mining engineering. Metallurgy Abdullah, Ahmad Makarimi Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography |
| thesis_level | Master |
| title | Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography |
| title_full | Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography |
| title_fullStr | Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography |
| title_full_unstemmed | Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography |
| title_short | Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography |
| title_sort | optimization of potassium hydroxide koh etching on the fabrication of p type silicon nanowire transistor patterned by atomic force microscopy lithography |
| topic | TN1-997 Mining engineering. Metallurgy |
| url | http://eprints.usm.my/41348/ |
| work_keys_str_mv | AT abdullahahmadmakarimi optimizationofpotassiumhydroxidekohetchingonthefabricationofptypesiliconnanowiretransistorpatternedbyatomicforcemicroscopylithography |