A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
This study examined AlxGa1-xN alloys grown on Si substrate for UVphotodetectors and transistors applications. Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. Undoped and n-type Si-doped samp...
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة |
| اللغة: | الإنجليزية |
| منشور في: |
2011
|
| الموضوعات: | |
| الوصول للمادة أونلاين: | http://eprints.usm.my/41621/ |
| Abstract | Abstract here |