Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications

The main goal of this work presented in this thesis was to fabricate nanostructures of GaN using two low-cost electrochemical techniques namely photoelectrochemical etching (PECE) and electrochemical deposition (ECD). In the first category of this work, the porous GaN was generated using photoelectr...

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التفاصيل البيبلوغرافية
المؤلف الرئيسي: Al-Heuseen, Khalled Mhammad Kallef
التنسيق: أطروحة
اللغة:الإنجليزية
منشور في: 2011
الموضوعات:
الوصول للمادة أونلاين:http://eprints.usm.my/41902/
Abstract Abstract here
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author Al-Heuseen, Khalled Mhammad Kallef
author_facet Al-Heuseen, Khalled Mhammad Kallef
author_sort Al-Heuseen, Khalled Mhammad Kallef
description The main goal of this work presented in this thesis was to fabricate nanostructures of GaN using two low-cost electrochemical techniques namely photoelectrochemical etching (PECE) and electrochemical deposition (ECD). In the first category of this work, the porous GaN was generated using photoelectrochemical etching techniques under different conditions, i.e. current density, different duration of etching and different electrolytes. The results showed that the average pore size was sensitive to the current density, and different electrolytes generated different morphology.
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spelling usm-419022019-04-12T05:26:35Z http://eprints.usm.my/41902/ Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications Al-Heuseen, Khalled Mhammad Kallef QC1 Physics (General) The main goal of this work presented in this thesis was to fabricate nanostructures of GaN using two low-cost electrochemical techniques namely photoelectrochemical etching (PECE) and electrochemical deposition (ECD). In the first category of this work, the porous GaN was generated using photoelectrochemical etching techniques under different conditions, i.e. current density, different duration of etching and different electrolytes. The results showed that the average pore size was sensitive to the current density, and different electrolytes generated different morphology. 2011-05 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/41902/1/KHALLED_MHAMMAD_KALLEF_AL-HEUSEEN.pdf Al-Heuseen, Khalled Mhammad Kallef (2011) Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications. PhD thesis, Universiti Sains Malaysia.
spellingShingle QC1 Physics (General)
Al-Heuseen, Khalled Mhammad Kallef
Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
thesis_level PhD
title Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
title_full Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
title_fullStr Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
title_full_unstemmed Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
title_short Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
title_sort synthesis of gallium nitride gan nanostructures by electrochemical techniques for sensing applications
topic QC1 Physics (General)
url http://eprints.usm.my/41902/
work_keys_str_mv AT alheuseenkhalledmhammadkallef synthesisofgalliumnitridegannanostructuresbyelectrochemicaltechniquesforsensingapplications