Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon

Highly doped n-type porous silicons (PS) were prepared via electrochemical etching. The effect of current density (50 – 300 mA cm-2), etching time (30 – 300 s) and HF concentration (9.2 – 49.0% (v/v)) on the morphology, pore diameter, porosity, surface roughness and electrical properties of the PS w...

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