Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work w...
| 第一著者: | |
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| フォーマット: | 学位論文 |
| 言語: | 英語 |
| 出版事項: |
2017
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| 主題: | |
| オンライン･アクセス: | http://eprints.usm.my/42902/ |
| _version_ | 1846216453753143296 |
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| author | Kamarulzaman, Azharul Ariff |
| author_facet | Kamarulzaman, Azharul Ariff |
| author_sort | Kamarulzaman, Azharul Ariff |
| description | This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work was then extended to develop metal-semiconductor-metal (MSM) photodetector using the most possible metal/metal oxide contact, to increase the efficiency of the device. The initial part of this thesis focus on ameliorating the properties of the polycrystalline GaN layer by controlling gas ambient, time, temperature, and gas flow rate of the annealing treatment. |
| first_indexed | 2025-10-17T08:20:14Z |
| format | Thesis |
| id | usm-42902 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2025-10-17T08:20:14Z |
| publishDate | 2017 |
| record_format | eprints |
| spelling | usm-429022019-04-12T05:24:53Z http://eprints.usm.my/42902/ Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector Kamarulzaman, Azharul Ariff QC1 Physics (General) This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work was then extended to develop metal-semiconductor-metal (MSM) photodetector using the most possible metal/metal oxide contact, to increase the efficiency of the device. The initial part of this thesis focus on ameliorating the properties of the polycrystalline GaN layer by controlling gas ambient, time, temperature, and gas flow rate of the annealing treatment. 2017-12 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/42902/1/AZHARUL_ARIFF__KAMARULZAMAN.pdf Kamarulzaman, Azharul Ariff (2017) Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector. PhD thesis, Universiti Sains Malaysia. |
| spellingShingle | QC1 Physics (General) Kamarulzaman, Azharul Ariff Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector |
| title | Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector |
| title_full | Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector |
| title_fullStr | Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector |
| title_full_unstemmed | Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector |
| title_short | Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector |
| title_sort | polycrystalline gan layer on m plane sapphire substrate for metal semiconductor metal photodetector |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/42902/ |
| work_keys_str_mv | AT kamarulzamanazharulariff polycrystallineganlayeronmplanesapphiresubstrateformetalsemiconductormetalphotodetector |