Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector

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This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work w...

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Bibliographic Details
Main Author:	Kamarulzaman, Azharul Ariff
Format:	Thesis
Language:	English
Published:	2017
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/42902/
Abstract	Abstract here

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