A Study On Process-Generated Crystal Defects And Corresponding Leakage Current Of P-N Junctions In Bipolar Transistors

An investigation into excess reverse leakage current of p-n junction process control structures in an industrial bipolar junction transistor technology is detailed in this work. Excess leakage is shown to be caused by rod-like crystal defects generated from a boron implantation process. The ro...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखक:	Cheah , Chun Yee
स्वरूप:	थीसिस
भाषा:	अंग्रेज़ी
प्रकाशित:	2010
विषय:	QC1 Physics (General)
ऑनलाइन पहुंच:	http://eprints.usm.my/42912/
Abstract	Abstract here

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