Simulation On Performance Of Gan-Based Light Emitting Diodes With Varied Geometry And Contacts Design
The main objective of this research is to minimize the current crowding problem inside GaN-based Light Emitting Diode (LED). Self heating effects and low radiative recombination are among the consequences that restrict the true potential of high electrical and optical performance of LED. By using de...
| मुख्य लेखक: | Othman, Muhammad Firdaus |
|---|---|
| स्वरूप: | थीसिस |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2010
|
| विषय: | |
| ऑनलाइन पहुंच: | http://eprints.usm.my/43030/ |
समान संसाधन
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प्रकाशित: (2005)
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प्रकाशित: (2022)
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प्रकाशित: (2015)
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प्रकाशित: (2015)
समान संसाधन
-
Thermal And Optical Performance Of Ingaalp-Based Low- And Gan-Based High-Power Light-Emitting Diode Packages
द्वारा: Abdullah Raypah, Muna Ezzi
प्रकाशित: (2020) -
Transparent Conductive Electrodes For Gan-Based Light Emitting Device
द्वारा: Ali, Ahmad Hadi
प्रकाशित: (2016) -
Epitaxial Growth Of Gan On Gan Multi Quantum Well For The Deep Green Light Emitting Diode
द्वारा: Abdul Rais, Shamsul Amir
प्रकाशित: (2022) -
Comparison Of Thermal And Optical Behaviors Of Pre-Molded And Ceramic Package Light Emitting Diodes
द्वारा: Lee, Zhi Yin
प्रकाशित: (2013) -
Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition
द्वारा: Samsudin, Muhammad Esmed Alif
प्रकाशित: (2023)