Studies Of The Effect Of Post Deposition Annealing To The Ceo2 Thin Film On P-Type Silicon And N-Type Silicon Carbide Substrates

Cerium Oxide (CeO2) thin film has been deposited on silicon (Si) and silicon carbide (SiC) substrates using a radio frequency magnetron sputtering technique. The effect of post deposition annealing at different temperatures (400, 600, 800 and 1000oC) in argon (Ar) ambient for 30 minutes has been inv...

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Détails bibliographiques
Auteur principal:	Chuah, Soo Kiet
Format:	Thèse
Langue:	anglais
Publié:	2011
Sujets:	TN1-997 Mining engineering. Metallurgy
Accès en ligne:	http://eprints.usm.my/43243/

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