The Electrical And Structural Properties Of Aluminium And Nitrogen Doped Zinc Oxide Thin Film Prepared By Radio Frequency Sputtering

Zinc Oxide (ZnO) is an attractive semiconductor for various applications due to its direct wide band gap (3.37 eV) and high exciton binding energy (60 meV). Thus, realization of reproducible and good p-type ZnO is important for the formation of homo p-n junction in electronic and opto-electronic dev...

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Bibliographic Details
Main Author:	Low, Lynn Yien
Format:	Thesis
Language:	English
Published:	2013
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/43780/
Abstract	Abstract here

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