Investigation of simultaneous thermal oxidation and nitridation of sputtered zirconium on silicon and silicon carbide in nitrous oxide gas environment
Thin film Zr on Si and SiC were formed by sputtering. The films then underwent simultaneous oxidation and nitridation in N2O. The effects of oxidation/nitridation durations (5 20 min) and temperatures (500 1100oC) on the sputtered Zr/Si system and the effects of oxidation/nitridation temperatures (...
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| フォーマット: | 学位論文 |
| 言語: | 英語 |
| 出版事項: |
2012
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| 主題: | |
| オンライン･アクセス: | http://eprints.usm.my/44927/ |
| 要約: | Thin film Zr on Si and SiC were formed by sputtering. The films then underwent simultaneous oxidation and nitridation in N2O. The effects of oxidation/nitridation
durations (5 20 min) and temperatures (500 1100oC) on the sputtered Zr/Si system and the effects of oxidation/nitridation temperatures (400 900oC) and the concentrations of N2O (10 100%) to the characteristics of the sputtered Zr/SiC system were studied. Structural, chemical, and electrical properties of the samples were examined. X-ray photoelectron spectroscopy results showed that ZrO2 thin film was formed with an interfacial layer (IL) of Zr-silicate oxynitride (ZrSiON) on Si, while Zr-oxynitride (ZrON) thin film was formed with an IL of ZrSiON and carbon nitride on SiC. |
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