The Effect Of Substrate Temperature And Annealing On The Photoresponse Of Zno Uv Sensor
Zinc Oxide (ZnO) is a II-VI compound semiconductor with a direct band gap of 3.37 eV and a high exciton binding energy of 60 meV. Thus, ZnO based optoelectronic devices working in UV region have been studied extensively. For the wide applications of ZnO, numerous ZnO thin films nanostructure prepara...
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| フォーマット: | 学位論文 |
| 言語: | 英語 |
| 出版事項: |
2013
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| 主題: | |
| オンライン･アクセス: | http://eprints.usm.my/46108/ |