The Effect Of Substrate Temperature And Annealing On The Photoresponse Of Zno Uv Sensor

Zinc Oxide (ZnO) is a II-VI compound semiconductor with a direct band gap of 3.37 eV and a high exciton binding energy of 60 meV. Thus, ZnO based optoelectronic devices working in UV region have been studied extensively. For the wide applications of ZnO, numerous ZnO thin films nanostructure prepara...

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Bibliographic Details
Main Author:	Ahmad, Halim
Format:	Thesis
Language:	English
Published:	2013
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/46108/
Abstract	Abstract here

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