Study Of Gan Low Dimensional Structures On Silicon Substrates Grown By Thermal Vapor Deposition For Photodiode And Solar Cell Applications
Gallium nitride (GaN) is a greatly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Heterostructure solar cell involving GaN low Dimensional (low D) structures on single crystalline silicon (Si) substrates are the preferable choice as they...
| मुख्य लेखक: | Abdelrahman, Kamaleldin Mohamed Abdalla |
|---|---|
| स्वरूप: | थीसिस |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2014
|
| विषय: | |
| ऑनलाइन पहुंच: | http://eprints.usm.my/46120/ |
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समान संसाधन
-
Characterization Of Gan Nanowies Grown By Thermal Evaporation On Different Substrates And The Study Of Their Capability As A Solar Cell
द्वारा: Shekari, Leila
प्रकाशित: (2013) -
Size-controlled the gold nanoparticles on silicon suboxide film grown by vapor deposition techniques / Chan Kee Wah
द्वारा: Chan, Kee Wah
प्रकाशित: (2012) -
Effect of surface pretreatments on the deposition of polycrystalline diamond on silicon nitride substrates using hot filament chemical vapor deposition method
द्वारा: Awang Sh'ri, Dayangku Noorfazidah
प्रकाशित: (2009) -
Effect of surface pretreatments on the deposition of polycrystalline diamond on silicon nitride substrates using hot filament chemical vapor deposition method
द्वारा: Dayangku Noorfazidah, Awang Sh'ri
प्रकाशित: (2009) -
Fabrication And Characterization Of Gan
Grown On Cubic Si (100) And Gaas (001)
Substrates
द्वारा: Mohmad Zaini, Siti Nurul Waheeda
प्रकाशित: (2015)