Study Of Gan Low Dimensional Structures On Silicon Substrates Grown By Thermal Vapor Deposition For Photodiode And Solar Cell Applications

Gallium nitride (GaN) is a greatly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Heterostructure solar cell involving GaN low Dimensional (low D) structures on single crystalline silicon (Si) substrates are the preferable choice as they...

書誌詳細
第一著者:	Abdelrahman, Kamaleldin Mohamed Abdalla
フォーマット:	学位論文
言語:	英語
出版事項:	2014
主題:	QC1 Physics (General)
オンライン･アクセス:	http://eprints.usm.my/46120/

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