Study Of Gan Low Dimensional Structures On Silicon Substrates Grown By Thermal Vapor Deposition For Photodiode And Solar Cell Applications
Gallium nitride (GaN) is a greatly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Heterostructure solar cell involving GaN low Dimensional (low D) structures on single crystalline silicon (Si) substrates are the preferable choice as they...
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| フォーマット: | 学位論文 |
| 言語: | 英語 |
| 出版事項: |
2014
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| オンライン・アクセス: | http://eprints.usm.my/46120/ |