Study Of The Relationship Between Delta Delay And Adjacent Parallel Wire Length In 45 Nanometer Process Technology

Hierarchical design spans the complete framework of a design flow from Register Transfer Level (RTL), synthesis, place and route, timing closure and various other analyses before sign-off. Finer geometries and increasing interconnect density however have resulted signal integrity becoming the key is...

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Main Author: Mohamed, Shamsul Anuar
Format: Thesis
Language:English
Published: 2014
Subjects:
Online Access:http://eprints.usm.my/46237/
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author Mohamed, Shamsul Anuar
author_facet Mohamed, Shamsul Anuar
author_sort Mohamed, Shamsul Anuar
description Hierarchical design spans the complete framework of a design flow from Register Transfer Level (RTL), synthesis, place and route, timing closure and various other analyses before sign-off. Finer geometries and increasing interconnect density however have resulted signal integrity becoming the key issue for Deep Sub-Micron design. Post silicon bug due to noise and signal integrity can be prevented and fixed at early stage of the IC design cycle. The purpose of this research is to establish a preventive measurement for adjacent wire that can travel in parallel for 45nm technology. The intention is to ensure that a complex design can be delivered to the market with accurate, fast and trusted analysis and provide sign-off solution. Main approach is to conduct the relationship study between delta delay and adjacent parallel wire in 45 nanometer (nm) process technology and provide a preventive measurement to limit the adjacent wire can travel in parallel. The design is explored thoroughly to study the relationship between delay noise and adjacent parallel wire. The correlation is translated into an equation to estimate the delay noise produced with a certain length of adjacent parallel wire.
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spelling usm-462372020-02-17T02:37:49Z http://eprints.usm.my/46237/ Study Of The Relationship Between Delta Delay And Adjacent Parallel Wire Length In 45 Nanometer Process Technology Mohamed, Shamsul Anuar TK1-9971 Electrical engineering. Electronics. Nuclear engineering Hierarchical design spans the complete framework of a design flow from Register Transfer Level (RTL), synthesis, place and route, timing closure and various other analyses before sign-off. Finer geometries and increasing interconnect density however have resulted signal integrity becoming the key issue for Deep Sub-Micron design. Post silicon bug due to noise and signal integrity can be prevented and fixed at early stage of the IC design cycle. The purpose of this research is to establish a preventive measurement for adjacent wire that can travel in parallel for 45nm technology. The intention is to ensure that a complex design can be delivered to the market with accurate, fast and trusted analysis and provide sign-off solution. Main approach is to conduct the relationship study between delta delay and adjacent parallel wire in 45 nanometer (nm) process technology and provide a preventive measurement to limit the adjacent wire can travel in parallel. The design is explored thoroughly to study the relationship between delay noise and adjacent parallel wire. The correlation is translated into an equation to estimate the delay noise produced with a certain length of adjacent parallel wire. 2014-01 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/46237/1/Shamsul%20Anuar%20Bin%20Mohamed24.pdf Mohamed, Shamsul Anuar (2014) Study Of The Relationship Between Delta Delay And Adjacent Parallel Wire Length In 45 Nanometer Process Technology. Masters thesis, Universiti Sains Malaysia.
spellingShingle TK1-9971 Electrical engineering. Electronics. Nuclear engineering
Mohamed, Shamsul Anuar
Study Of The Relationship Between Delta Delay And Adjacent Parallel Wire Length In 45 Nanometer Process Technology
title Study Of The Relationship Between Delta Delay And Adjacent Parallel Wire Length In 45 Nanometer Process Technology
title_full Study Of The Relationship Between Delta Delay And Adjacent Parallel Wire Length In 45 Nanometer Process Technology
title_fullStr Study Of The Relationship Between Delta Delay And Adjacent Parallel Wire Length In 45 Nanometer Process Technology
title_full_unstemmed Study Of The Relationship Between Delta Delay And Adjacent Parallel Wire Length In 45 Nanometer Process Technology
title_short Study Of The Relationship Between Delta Delay And Adjacent Parallel Wire Length In 45 Nanometer Process Technology
title_sort study of the relationship between delta delay and adjacent parallel wire length in 45 nanometer process technology
topic TK1-9971 Electrical engineering. Electronics. Nuclear engineering
url http://eprints.usm.my/46237/
work_keys_str_mv AT mohamedshamsulanuar studyoftherelationshipbetweendeltadelayandadjacentparallelwirelengthin45nanometerprocesstechnology