Spin Coating Growth And Characterization Of Indium Nitride Thin Films
Indium nitride (InN) has received attention of researchers and manufacturing industry because of its unique properties such as narrow energy band gap of 0.7 – 1.0 eV, high electron mobility and low carrier concentration. However, there is relatively few reported studies concerning the growth mechani...
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| フォーマット: | 学位論文 |
| 言語: | 英語 |
| 出版事項: |
2018
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| 主題: | |
| オンライン･アクセス: | http://eprints.usm.my/47541/ |