Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work w...
| 主要作者: | |
|---|---|
| 格式: | Thesis |
| 语言: | 英语 |
| 出版: |
2017
|
| 主题: | |
| 在线阅读: | http://eprints.usm.my/47791/ |