Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work w...
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| フォーマット: | 学位論文 |
| 言語: | 英語 |
| 出版事項: |
2017
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| 主題: | |
| オンライン･アクセス: | http://eprints.usm.my/47791/ |