Thermal And Optical Performance Of Ingaalp-Based Low- And Gan-Based High-Power Light-Emitting Diode Packages
This study was divided into three main parts. In the first part, the performance of indium gallium aluminum phosphide (InGaAlP) low-power (LP) SMD LED affixed to substrates with different configurations. In the second part, the heat-dissipation factor, optical power, luminous flux, and spectral flux...
| المؤلف الرئيسي: | Abdullah Raypah, Muna Ezzi |
|---|---|
| التنسيق: | أطروحة |
| اللغة: | الإنجليزية |
| منشور في: |
2020
|
| الموضوعات: | |
| الوصول للمادة أونلاين: | http://eprints.usm.my/55618/ |
مواد مشابهة
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مواد مشابهة
-
Comparison Of Thermal And Optical Behaviors Of Pre-Molded And Ceramic Package Light Emitting Diodes
حسب: Lee, Zhi Yin
منشور في: (2013) -
Simulation On Performance Of Gan-Based Light Emitting Diodes With Varied Geometry And Contacts Design
حسب: Othman, Muhammad Firdaus
منشور في: (2010) -
Epitaxial Growth Of Gan On Gan Multi Quantum Well For The Deep Green Light Emitting Diode
حسب: Abdul Rais, Shamsul Amir
منشور في: (2022) -
Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate
حسب: Alias, Ezzah Azimah
منشور في: (2024) -
Transparent Conductive Electrodes For Gan-Based Light Emitting Device
حسب: Ali, Ahmad Hadi
منشور في: (2016)